| PART |
Description |
Maker |
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| IRFI830G IRFI830GPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 1.5ohm，身份证\u003d 3.1A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
| IRFI9634G |
-250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V Rds(on)=1.0ohm Id=-4.1A)
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)
|
IRF[International Rectifier]
|
| IRFR9120NPBF IRFU9120NPBF IRFR9120NTR IRFR9120NTRL |
6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48Ω , ID = -6.6A )
HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A )
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| IRFI3205 IRFI3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=64A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.008ohm/ Id=64A)
|
IRF[International Rectifier]
|
| IRFI744G IRFI744GPBF |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=450V Rds(on)=0.63ohm Id=4.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=4.9A) 功率MOSFET（减振钢板基本\u003d 450V，的Rds（on）\u003d 0.63ohm，身份证\u003d 4.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRF9540NSPBF IRF9540NLPBF IRF9540NSTRLPBF IRF9540N |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A )
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A )
Advanced Process Technology
|
International Rectifier
|
| IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
